The third generation of semiconductors

The first generation of semiconductors were represented by silicon (Si) and germanium (Ge), and most semiconductors today are based on silicon.

The second generation semiconductor, represented by gallium arsenide (GaAs) and gallium phosphide (GaP), is the material of most communications equipment in the 4G era.

The third generation of semiconductors are represented by gallium nitride (GaN), silicon carbide (SiC), zinc oxide (ZnO) and adamas, which are the main materials in the 5G era.

In wireless communication, automotive electronics, power grid, high-speed rail, satellite communication, military radar, aerospace and other fields with silicon incomparable advantages.

GaN is usually used in low voltage, such as small household appliances, especially chargers are the most widely used.

SiC is usually used in high voltage, such as vehicle, 5G base station, power grid and so on.

In simple terms, the advantages of the third generation of semiconductors are: high pressure resistance, high temperature resistance, high power, radiation resistance, strong conductivity, fast working speed, low working loss.

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